maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 200 ma peak repetitive forward current i frm 350 ma forward surge current, tp=10ms i fsm 750 ma power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units b vr i r =100 a4050v v f i f =2.0ma 0.29 0.33 v v f i f =15ma 0.37 0.42 v v f i f =100ma 0.61 0.80 v v f i f =200ma 0.65 1.0 v i r v r =25v 90 500 na i r v r =25v, t a =100c 25 100 a c t v r =1.0v, f=1.0 mhz 7.0 pf t rr i f =i r =10ma, i rr =1.0ma, r l =100 ? 5.0 ns CMLSH-4DO surface mount picomini tm dual isolated opposing silicon schottky diodes sot-563 case central semiconductor corp. tm r2 (28-may 2003) description: the central semiconductor CMLSH-4DO are two individual electrically isolated 40 volt schottky diodes of opposing polarity, in a space saving sot-563 surface mount package. this picomini? device has been designed for applications requiring fast switching speeds and a low forward voltage drop. marking code: l4o
a b c h g f d e e r0 12 3 65 4 central semiconductor corp. tm sot-563 case - mechanical outline CMLSH-4DO surface mount picomini tm dual isolated opposing silicon schottky diodes r2 (28-may 2003) lead code: 1) anode d1 2) nc 3) cathode d2 4) anode d2 5) nc 6) cathode d1 marking code: l4o
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